2SK1070 Datasheet - Hitachi Semiconductor

2SK1070 Silicon N-Channel Junction FET

2SK1070 Silicon N-Channel Junction FET Application Low frequency / High frequency amplifier Outline MPAK 3 1 2 1. Drain 2. Source 3. Gate 2SK1070 Absolute Maximum Ratings (Ta = 25°C) Item Gate to drain voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VGDO VGSO ID IG Pch Tch Tstg Ratings 22 22 50 10 150 150 55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Ite.

2SK1070_HitachiSemiconductor.pdf