2SK1007 Datasheet, Transistor, Inchange Semiconductor

PDF File Details

Part number:

2SK1007

Manufacturer:

Inchange Semiconductor

File Size:

201.25kb

Download:

📄 Datasheet

Description:

N-channel mosfet transistor.

Drain Current   –ID=5A@ TC=25℃

Drain Source Voltage- : VDSS= 450V(Min)

Minimum Lot-to-Lot va

2SK1007 Application

• Applications
• Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and rela

TAGS

2SK1007

Inchange Semiconductor

📁 Related Datasheet

2SK1006 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.

2SK1006-01MR - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.

2SK1007-01 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.

2SK1008 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=4.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Minimum Lot-to-Lot variations f.

2SK1008-01 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.

2SK1009 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Minimum Lot-to-Lot variations for.

2SK1010 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Minimum Lot-to-Lot variations for.

2SK1010-01 - N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)
.. .. .. .. .

2SK1011 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Minimum Lot-to-Lot variations fo.

2SK1011-01 - N-Channel Silicon Power MOSFET (Fuji Electric)
.