2SK1014 Datasheet, Transistor, Inchange Semiconductor

PDF File Details

Part number:

2SK1014

Manufacturer:

Inchange Semiconductor

File Size:

203.25kb

Download:

📄 Datasheet

Description:

N-channel mosfet transistor.

  • Drain Current   –ID=12A@ TC=25℃
  • Drain Source Voltage- : VDSS=500V(Min)
  • Minimum Lot-to-Lot va

  • Datasheet Preview: 2SK1014 📥 Download PDF (203.25kb)
    Page 2 of 2SK1014

    2SK1014 Application

    • Applications
    • high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Vol

    TAGS

    2SK1014
    N-Channel
    MOSFET
    Transistor
    Inchange Semiconductor

    📁 Related Datasheet

    2SK1010 - N-Channel MOSFET Transistor (Inchange Semiconductor)
    isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Minimum Lot-to-Lot variations for.

    2SK1010-01 - N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)
    .. .. .. .. .

    2SK1011 - N-Channel MOSFET Transistor (Inchange Semiconductor)
    isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Minimum Lot-to-Lot variations fo.

    2SK1011-01 - N-Channel Silicon Power MOSFET (Fuji Electric)
    .

    2SK1012 - N-Channel MOSFET Transistor (Inchange Semiconductor)
    isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Minimum Lot-to-Lot variations fo.

    2SK1012-01 - N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)
    .

    2SK1013 - N-Channel MOSFET Transistor (Inchange Semiconductor)
    isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Minimum Lot-to-Lot variations fo.

    2SK1013-01 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
    .

    2SK1014-01 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
    .

    2SK1015 - N-Channel MOSFET Transistor (Inchange Semiconductor)
    isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Minimum Lot-to-Lot variations for.

    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts