Datasheet4U Logo Datasheet4U.com

2SK1010 - N-Channel MOSFET Transistor

Datasheet Summary

Description

Drain Current ID=6A@ TC=25℃ Drain Source Voltage- : VDSS= 500V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VA

📥 Download Datasheet

Datasheet preview – 2SK1010

Datasheet Details

Part number 2SK1010
Manufacturer Inchange Semiconductor
File Size 199.85 KB
Description N-Channel MOSFET Transistor
Datasheet download datasheet 2SK1010 Datasheet
Additional preview pages of the 2SK1010 datasheet.

📁 Similar Datasheet

  • 2SK1010-01 - N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)
  • 2SK1011-01 - N-Channel Silicon Power MOSFET (Fuji Electric)
  • 2SK1012-01 - N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)
  • 2SK1013-01 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
  • 2SK1014-01 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
  • 2SK1016 - POWER MOSFET (Fuji Electric)
  • 2SK1017-01 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
  • 2SK1018 - POWER MOSFET (Fuji Electric)
  • 2SK1019 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
  • 2SK1006 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
Other Datasheets by Inchange Semiconductor
  • 2SK1011 - N-Channel MOSFET Transistor
  • 2SK1012 - N-Channel MOSFET Transistor
  • 2SK1013 - N-Channel MOSFET Transistor
  • 2SK1014 - N-Channel MOSFET Transistor
  • 2SK1015 - N-Channel MOSFET Transistor
  • 2SK1016 - N-Channel MOSFET Transistor
  • 2SK1017 - N-Channel MOSFET Transistor
  • 2SK1018 - N-Channel MOSFET Transistor

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 6 A Ptot Total Dissipation@TC=25℃ 80 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W 2SK1010 isc website：www.iscsemi.
Published: |