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2SK2529 - Silicon N-Channel MOSFET

2SK2529 Description

2SK2529 Silicon N-Channel MOS FET ADE-208-356F 7th.Edition Application High speed power switching .

2SK2529 Features

* Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-220CFM D G 12 3 1. Gate 2. Drain 3. Source S 2SK2529 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to sou

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Datasheet Details

Part number
2SK2529
Manufacturer
Hitachi Semiconductor
File Size
51.33 KB
Datasheet
2SK2529_HitachiSemiconductor.pdf
Description
Silicon N-Channel MOSFET

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