* Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2553(L), 2SK2553(S) Absolute Maximum Ratings (Ta = 25°C) Item Drai
2SK2553S
Hitachi Semiconductor
41.18 KB
Silicon n channel mos fet.
2SK2553(L), 2SK2553(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-357H (Z) 9th. Edition February 1999 Application High speed power .
📁 Related Datasheet
2SK2553 N-Channel MOSFET (Hitachi Semiconductor)
2SK2553L N-Channel MOSFET (Hitachi Semiconductor)
2SK2550 Silicon N Channel MOS Type Field Effect Transistor (Toshiba Semiconductor)
2SK2551 Silicon N Channel MOS Type Field Effect Transistor (Toshiba Semiconductor)
2SK2552 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR (Renesas)
2SK2552B N-Channel MOSFET (NEC)
2SK2552C MOSFET (NEC)
2SK2554 Silicon N-Channel MOS FET (Hitachi Semiconductor)
2SK2554 Silicon N Channel MOS FET (Renesas)
2SK2555 N-Channel Silicon MOSFET (Sanyo)
