2SK2796 Silicon N Channel MOS FET

Hitachi Semiconductor

Description

2SK2796(L), 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-534C (Z) 4th.Edition Jun 1998 .

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Datasheet Specifications

Part number: 2SK2796
Manufacturer: Hitachi Semiconductor
File Size: 54.65 KB
Datasheet: 2SK2796_HitachiSemiconductor.pdf
Description: Silicon N Channel MOS FET

Features

* Low on-resistance R DS(on) = 0.12Ω typ.
* 4V gate drive devices.
* High speed switching Outline DPAK |1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to sourc

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2SK2796 Silicon Channel MOS FET Hitachi Semiconductor

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