2SK2796 - Silicon N Channel MOS FET

Hitachi Semiconductor

Datasheet Details

Part number	2SK2796
Manufacturer	Hitachi Semiconductor
File Size	54.65 KB
Description	Silicon N Channel MOS FET
Datasheet	2SK2796_HitachiSemiconductor.pdf

Low on-resistance R DS(on) = 0.12Ω typ.
4V gate drive devices.
High speed switching Outline DPAK |1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS.

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Published: Mar 30, 2005 |