2SK2796S - Silicon N Channel MOS FET
2SK2796S Features
* Low on-resistance R DS(on) = 0.12Ω typ.
* 4V gate drive devices.
* High speed switching Outline DPAK |1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to sourc
