2SK2796S Datasheet, Fet, Hitachi Semiconductor

✔ 2SK2796S Features

Low on-resistance R DS(on) = 0.12Ω typ.
4V gate drive devices.
High speed switching Outline DPAK |1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Dra

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Part number:

2SK2796S

Manufacturer:

Hitachi Semiconductor

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54.65 KB

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📄 Datasheet

Description:

Silicon n channel mos fet.

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Trans MOSFET N-CH Si 60V 5A 3-Pin(2+Tab) DPAK(S) T/R

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2SK2796S Silicon Channel MOS FET Hitachi Semiconductor

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Renesas Electronics Corporation

2SK2796STLEZZZZ

HIGH SPEED POWER SWITCHING SILICON N CHANNEL MOS FET Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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