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2SK2796S Datasheet - Hitachi Semiconductor

2SK2796S - Silicon N Channel MOS FET

2SK2796S Features

* Low on-resistance R DS(on) = 0.12Ω typ.

* 4V gate drive devices.

* High speed switching Outline DPAK |1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to sourc

2SK2796S_HitachiSemiconductor.pdf

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Datasheet Details

Part number:

2SK2796S

Manufacturer:

Hitachi Semiconductor

File Size:

54.65 KB

Description:

Silicon n channel mos fet.

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