2SK2955 - Silicon N Channel MOS FET

Hitachi Semiconductor

Datasheet Details

Part number	2SK2955
Manufacturer	Hitachi Semiconductor
File Size	51.92 KB
Description	Silicon N Channel MOS FET
Datasheet	2SK2955_HitachiSemiconductor.pdf

Low on-resistance R DS =0.010 Ω typ.
High speed switching.
4V gate drive device can be driven from 5V source Outline TO.
3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2955 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS V.

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Published: Mar 30, 2005 |