2SK2957S Silicon N Channel MOS FET

Hitachi Semiconductor

Description

2SK2957(L),2SK2957(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-567D (Z) 5th.Edition Jun 1998 .

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Datasheet Specifications

Part number: 2SK2957S
Manufacturer: Hitachi Semiconductor
File Size: 50.80 KB
Datasheet: 2SK2957S_HitachiSemiconductor.pdf
Description: Silicon N Channel MOS FET

Features

* Low on-resistance R DS(on) = 7mΩ typ.
* 4V gate drive devices.
* High speed switching Outline LDPAK 4 D 4 1 G 1 2 3 2 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2957(L),2SK2957(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source vol

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2SK2957S Silicon Channel MOS FET Hitachi Semiconductor

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