Part number:
HAT1036R
Manufacturer:
Hitachi Semiconductor
File Size:
50.66 KB
Description:
Silicon p-channel power mosfet.
* Low on-resistance R DS(on) = 11 mΩ typ
* Capable of -4 V gate drive
* Low drive current
* High density mounting Outline SOP
* 8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT1036R Absolute Maximum Ratings (Ta
HAT1036R
Hitachi Semiconductor
50.66 KB
Silicon p-channel power mosfet.
📁 Related Datasheet
HAT1036R - Silicon P-Channel Power MOSFET
(Renesas)
HAT1036R
Silicon P Channel Power MOS FET Power Switching
Features
• Low on-resistance RDS (on) = 11 mΩ typ
• Capable of –4 V gate drive • Low drive c.
HAT1031T - Silicon P-Channel Power MOSFET
(Hitachi Semiconductor)
HAT1031T
Silicon P Channel Power MOS FET High Speed Power Switching
ADE-208-528D (Z) 5th. Edition December 1998 Features
• • • • Low on-resistance Ca.
HAT1033T - Silicon P-Channel Power MOSFET
(Hitachi Semiconductor)
HAT1033T
Silicon P Channel Power MOS FET High Speed Power Switching
ADE-208-532H (Z) 9th. Edition February 1999 Features
• • • • Low on-resistance Ca.
HAT1035R - Silicon P-Channel Power MOSFET
(Renesas Technology)
HAT1035R
Silicon P Channel Power MOS FET High Speed Power Switching
Features
• Low on-resistance • Capable of –4 V gate drive • Low drive current • H.
HAT1038R - Silicon P-Channel Power MOSFET
(Hitachi Semiconductor)
HAT1038R/HAT1038RJ
Silicon P Channel Power MOS FET High Speed Power Switching
ADE-208-663C (Z) 4th. Edition February 1999 Features
• • • • For Automo.
HAT1038RJ - Silicon P-Channel Power MOSFET
(Hitachi Semiconductor)
HAT1038R/HAT1038RJ
Silicon P Channel Power MOS FET High Speed Power Switching
ADE-208-663C (Z) 4th. Edition February 1999 Features
• • • • For Automo.
HAT1000-S - Current Transducer
(LEM)
Current Transducer HAT 500..1500 - S
For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary .
HAT1000-S - (HAT200-S - HAT1500-S) Current Transducer
(LEM)
Current Transducer HAT 200..1500-S
For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary ci.