HAT1031T Datasheet, Mosfet, Hitachi Semiconductor

HAT1031T Features

• Mosfet
• Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP
    –8 65 34 87 1 D 8 D 12 4

PDF File Details

Part number:

HAT1031T

Manufacturer:

Hitachi Semiconductor

File Size:

57.83kb

Download:

📄 Datasheet

Description:

Silicon p-channel power mosfet.

HAT1031T Application

• Applications 09 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hi

TAGS

HAT1031T

Hitachi Semiconductor

📁 Related Datasheet

HAT1033T - Silicon P-Channel Power MOSFET (Hitachi Semiconductor)
HAT1033T Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-532H (Z) 9th. Edition February 1999 Features • • • • Low on-resistance Ca.

HAT1035R - Silicon P-Channel Power MOSFET (Renesas Technology)
HAT1035R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of –4 V gate drive • Low drive current • H.

HAT1036R - Silicon P-Channel Power MOSFET (Hitachi Semiconductor)
HAT1036R Silicon P Channel Power MOS FET Power Switching ADE-208-662D (Z) 5th. Edition February 1999 Features • Low on-resistance R DS(on) = 11 mΩ ty.

HAT1036R - Silicon P-Channel Power MOSFET (Renesas)
HAT1036R Silicon P Channel Power MOS FET Power Switching Features • Low on-resistance RDS (on) = 11 mΩ typ • Capable of –4 V gate drive • Low drive c.

HAT1038R - Silicon P-Channel Power MOSFET (Hitachi Semiconductor)
HAT1038R/HAT1038RJ Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-663C (Z) 4th. Edition February 1999 Features • • • • For Automo.

HAT1038RJ - Silicon P-Channel Power MOSFET (Hitachi Semiconductor)
HAT1038R/HAT1038RJ Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-663C (Z) 4th. Edition February 1999 Features • • • • For Automo.

HAT1000-S - Current Transducer (LEM)
Current Transducer HAT 500..1500 - S For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary .

HAT1000-S - (HAT200-S - HAT1500-S) Current Transducer (LEM)
Current Transducer HAT 200..1500-S For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary ci.

HAT1016R - Silicon P-Channel Power MOSFET (Hitachi Semiconductor)
HAT1016R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-471 D (Z) 5th. Edition February 1999 Features • • • • Low on-resistance C.

HAT1016R - Silicon P-Channel Power MOSFET (Renesas)
HAT1016R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • Hi.