HAT2016R, Hitachi Semiconductor
HAT2016R
Silicon N Channel Power MOS FET High Speed Power Switching
ADE-208-438 H (Z) 9th. Edition June 1997 Features
• • • • Low on-resistance Capab.
HAT2016R, Renesas
HAT2016R
Silicon N Channel Power MOS FET High Speed Power Switching
Features
• Low on-resistance • Capable of 4 V gate drive • Low drive current • Hi.
HAT200-S, LEM
Current Transducer HAT 200..1500-S
For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary ci.
HAT2020R, Hitachi Semiconductor
HAT2020R
Silicon N Channel Power MOS FET High Speed Power Switching
ADE-208-439 J (Z) 11th. Edition February 1999 Features
• • • • Low on-resistance .
HAT2020R, Renesas
HAT2020R
Silicon N Channel Power MOS FET High Speed Power Switching
Features
• Low on-resistance • Capable of 4 V gate drive • Low drive current • Hi.
HAT2022R, Hitachi Semiconductor
HAT2022R
Silicon N Channel Power MOS FET High Speed Power Switching
ADE-208-440 J (Z) 11th Edition February 1999 Features
• • • • Low on-resistance C.
HAT2022R, Renesas
HAT2022R
Silicon N Channel Power MOS FET High Speed Power Switching
Features
• Low on-resistance • Capable of 4 V gate drive • Low drive current • Hi.
HAT2024R, Hitachi Semiconductor
HAT2024R
Silicon N Channel Power MOS FET High Speed Power Switching
ADE-208-494 C (Z) 4th. Edition July 1997 Features
• • • • Low on-resistance Capab.