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HAT2016R Datasheet Silicon N-channel Power MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: HAT2016R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-438 H (Z) 9th.

HAT2016R datasheet preview

Datasheet Details

Part number	HAT2016R
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	53.56 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HAT2016R_HitachiSemiconductor.pdf

Key Features

Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP.
8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT2016R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperatur.

Similar Datasheet

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