HAT2016R Description
HAT2016R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-438 H (Z) 9th.
HAT2016R Key Features
- Low on-resistance Capable of 4 V gate drive Low drive current High density mounting
HAT2016R is Silicon N-Channel Power MOSFET manufactured by Hitachi Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
HAT2016R | Silicon N-Channel Power MOSFET |
VBsemi |
HAT2016R | Dual N-Channel 30V MOSFET |
HAT2016R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-438 H (Z) 9th.