HAT2016R - Dual N-Channel 30V MOSFET

VBsemi

Key Features

Halogen-free According to IEC 61249-2-21 Definition.
Trench Power MOSFET.
100 % UIS Tested.
100 % Rg Tested.
Compliant to RoHS Directive 2002/95/EC.

HAT2016R dual n-channel 30v mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	HAT2016R
Manufacturer	VBsemi
File Size	216.88 KB
Description	Dual N-Channel 30V MOSFET
Datasheet	HAT2016R Datasheet

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Full PDF Text Transcription (Reference)

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HAT2016R-VB HAT2016R-VB Datasheet Dual N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 10 V 30 0.026 at VGS = 4.5 V ID (A) 6.8 6.0 Qg (Typ.) 15 nC SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Trench Power MOSFET • 100 % UIS Tested • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Set Top Box • Low Current DC/DC D1 D2 G1 S1 N-Channel MOSFET G2 S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ± 20 TC = 25 °C 6.8a Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 5.6 6.