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HAT2016R - Silicon N-Channel Power MOSFET

Key Features

  • Low on-resistance.
  • Capable of 4 V gate drive.
  • Low drive current.
  • High density mounting Outline.

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Datasheet Details

Part number HAT2016R
Manufacturer Renesas
File Size 86.30 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HAT2016R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HAT2016R Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 78 DD 56 DD 87 65 1 234 2 4 G G S1 MOS1 S3 MOS2 REJ03G1156-1000 (Previous: ADE-208-438H) Rev.10.00 Sep 07, 2005 1, 3 2, 4 5, 6, 7, 8 Source Gate Drain Rev.10.00 Sep 07, 2005 page 1 of 7 HAT2016R Absolute Maximum Ratings Item Symbol Value Drain to source voltage Gate to source voltage VDSS 30 VGSS ±20 Drain current Drain peak current ID 6.5 ID (pulse) Note 1 52 Body-drain diode reverse drain current IDR 6.