Hitachi HAT2016R
Silicon N-Channel Power MOSFET
| Part No. | HAT2016R |
|---|---|
| Datasheet | HAT2016R Download |
| Manufacturer |  Hitachi |
| Description | Silicon N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
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● Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT2016R
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Pch Tch Tstg Note2 Note3 Note1 Ratings 30 ±20 6.5 52 6.5 2 3 150 –55 to +150 Unit V V A A A W W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 2 HAT2016RELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Ga...
