HL8325G Datasheet (Hitachi Semiconductor)

HL8325G, GaAlAs Laser Diode

The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure.

Its internal circuit configuration is suited for operation on a single positive supply voltage.

It is suitable as a light source for optical disk memories, card readers and various other types of o

HL8325G Features

* Infrared light output: λp = 820 to 840 nm High power: standard continuous operation at 40 mW (CW), pulsed operation at 50 mW Built-in monitor photodiode Single longitudinal mode 190 HL8325G Absolute Maximum Ratings (TC = 25°C) Item Optical output power Pulse