HL8325G Datasheet - Hitachi Semiconductor

HL8325G GaAlAs Laser Diode

The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various other types of o.

HL8325G Features

* Infrared light output: λp = 820 to 840 nm High power: standard continuous operation at 40 mW (CW), pulsed operation at 50 mW Built-in monitor photodiode Single longitudinal mode 190 HL8325G Absolute Maximum Ratings (TC = 25°C) Item Optical output power Pulse

HL8325G Datasheet (21.55 KB)