HM514400B Datasheet - Hitachi Semiconductor

HM514400B 1/048/576-word X 4-bit Dynamic Random Access Memory

Pin name A0 to A9 A0 to A9 I/O1 to I/O4 RAS CAS WE OE VCC VSS Function Address input Refresh address input Data-in/Data-out Row address strobe Column address strobe Read/Write enable Output enable Power (+5 V) Ground 4 Block Diagram RAS Row Driver Row Driver RAS Control Circuit 256 k Memory Ar.

ADE-203-269A (Z) 1,048,576-word × 4-bit Dynamic Random Access Memory Rev. 1.0 Nov. 29, 1994 The Hitachi HM514400B/BL, HM514400C/CL are CMOS dynamic RAM organized 1,048,576word × 4-bit. HM514400B/BL, HM514400C/CL have realized higher density, higher performance and various functions by employing 0.8 µm CMOS process technology and some new CMOS circuit design technologies. The HM514400B/BL, HM514400C/CL offer Fast Page Mode as a high speed access mode. Multiplexed address input permits the HM5144.

HM514400B Features

* Single 5 V (±10%)

* High speed

* Access time 60 ns/70 ns/80 ns (max)

* Low power dissipation

* Active mode 605 mW/550 mW/495 mW (max)

* Standby mode 11 mW (max) 0.55 mW (max) (L-version)

* Fast page mode capability

* 1024 refresh cycl

HM514400B Datasheet (235.11 KB)

HM514400B Datasheet Preview — Preview of HM514400B PDF

Datasheet Details

Part number:

HM514400B

Manufacturer:

Hitachi Semiconductor

File Size:

235.11 KB

Description:

1/048/576-word x 4-bit dynamic random access memory.

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TAGS

HM514400B 048 576-word 4-bit Dynamic Random Access Memory Hitachi Semiconductor

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