HM514400C - 1/048/576-word X 4-bit Dynamic Random Access Memory
Pin name A0 to A9 A0 to A9 I/O1 to I/O4 RAS CAS WE OE VCC VSS Function Address input Refresh address input Data-in/Data-out Row address strobe Column address strobe Read/Write enable Output enable Power (+5 V) Ground 4 Block Diagram RAS Row Driver Row Driver RAS Control Circuit 256 k Memory Ar
ADE-203-269A (Z) 1,048,576-word × 4-bit Dynamic Random Access Memory Rev.
1.0 Nov.
29, 1994 The Hitachi HM514400B/BL, HM514400C/CL are CMOS dynamic RAM organized 1,048,576word × 4-bit.
HM514400B/BL, HM514400C/CL have realized higher density, higher performance and various functions by employing 0.8 µm CMOS process technology and some new CMOS circuit design technologies.
The HM514400B/BL, HM514400C/CL offer Fast Page Mode as a high speed access mode.
Multiplexed address input permits the HM5144
HM514400C Features
* Single 5 V (±10%)
* High speed
* Access time 60 ns/70 ns/80 ns (max)
* Low power dissipation
* Active mode 605 mW/550 mW/495 mW (max)
* Standby mode 11 mW (max) 0.55 mW (max) (L-version)
* Fast page mode capability
* 1024 refresh cycl
