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HM6216255H - 4M high Speed SRAM (256-kword x 16-bit)

Datasheet Summary

Description

The HM6216255H Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit.

It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology.

Features

  • Single 5.0 Vsupply : 5.0 V ± 10 %.
  • Access time: 10/12/15 ns (max).
  • Completely static memory  No clock or timing strobe required.
  • Equal access and cycle times.
  • Directly TTL compatible  All inputs and outputs.
  • Operating current: 200/180/160 mA (max).
  • TTL standby current: 70/60/50 mA (max).
  • CMOS standby current: 5 mA (max) : 1.2 mA (max) (L-version).
  • Data retansion current: 0.8 mA (max) (L-version).
  • Data re.

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Datasheet Details

Part number HM6216255H
Manufacturer Hitachi Semiconductor
File Size 102.83 KB
Description 4M high Speed SRAM (256-kword x 16-bit)
Datasheet download datasheet HM6216255H Datasheet
Additional preview pages of the HM6216255H datasheet.

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Full PDF Text Transcription

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HM6216255H Series 4M high Speed SRAM (256-kword × 16-bit) ADE-203-763D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM6216255H Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII. Features • Single 5.0 Vsupply : 5.
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