HM628511H Datasheet - Hitachi Semiconductor

HM628511H - 4M High Speed SRAM (512-kword x 8-bit)

The HM628511H Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires hig.

HM628511H Features

* Single 5.0 V supply : 5.0 V ± 10 %

* Access time 10 /12 /15 ns (max)

* Completely static memory  No clock or timing strobe required

* Equal access and cycle times

* Directly TTL compatible  All inputs and outputs

* Operating current : 180 / 160 / 1

HM628511H_HitachiSemiconductor.pdf