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HSK120 - Silicon Epitaxial Planar Diode for High Speed Switching

Datasheet Summary

Features

  • Low reverse recovery time. (trr =3.0ns max).
  • LLD package is suitable for high density surface mounting and high speed assembly Ordering Information Type No. HSK120 Cathode band White Package Code LLD Outline Cathode band 1 2 Cathode band 1 2 1. Cathode 2. Anode HSK120 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperatu.

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Datasheet Details

Part number HSK120
Manufacturer Hitachi Semiconductor
File Size 26.63 KB
Description Silicon Epitaxial Planar Diode for High Speed Switching
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HSK120 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-171C(Z) Rev 3 Jan. 1999 Features • Low reverse recovery time. (trr =3.0ns max) • LLD package is suitable for high density surface mounting and high speed assembly Ordering Information Type No. HSK120 Cathode band White Package Code LLD Outline Cathode band 1 2 Cathode band 1 2 1. Cathode 2. Anode HSK120 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note Symbol VRM VR I FM I FSM IO Tj Tstg *1 Value 70 60 450 4 150 175 -65 to +175 Unit V V mA A mA °C °C 1. Within 1µs forward surge current..
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