HSK122 - Silicon Epitaxial Planar Diode for High Voltage Switching

Features

High reverse voltage. (VR = 400V).
LLD package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSK122 Cathode band Orange Package Code LLD Outline Cathode band 1 2 Cathode band 1 2 1. Cathode 2. Anode HSK122 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Junction temperature Storage temperature Note: Wi.

Hitachi Semiconductor

Datasheet Details

Part number	HSK122
Manufacturer	Hitachi Semiconductor
File Size	27.14 KB
Description	Silicon Epitaxial Planar Diode for High Voltage Switching
Datasheet	HSK122 Datasheet
Additional preview pages of the HSK122 datasheet.

📁 Similar Datasheet

HSK1118 - Silicon N Channel MOS Type (Hi-Sincerity Mocroelectronics)
HSK2474I - N-Channel MOSFETs (Hi-Sincerity Mocroelectronics)
HSK2474J - N-Channel MOSFETs (Hi-Sincerity Mocroelectronics)
HSK4148 - Silicon Epitaxial Planar Diode (Hitachi)

Other Datasheets by Hitachi Semiconductor

HSK120 - Silicon Epitaxial Planar Diode for High Speed Switching
HSK83 - Silicon Epitaxial Planar Diode for High Voltage Switching

Full PDF Text Transcription

Click to expand full text

HSK122 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-172B (Z) Rev. 2 Aug. 1995 Features • High reverse voltage. (VR = 400V) • LLD package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSK122 Cathode band Orange Package Code LLD Outline Cathode band 1 2 Cathode band 1 2 1. Cathode 2. Anode HSK122 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Junction temperature Storage temperature Note: Within 1s forward surge current.

Published: Mar 26, 2005 |