HSK120
HSK120 is Silicon Epitaxial Planar Diode for High Speed Switching manufactured by Hitachi Semiconductor.
Features
- Low reverse recovery time. (trr =3.0ns max)
- LLD package is suitable for high density surface mounting and high speed assembly
Ordering Information
Type No. HSK120 Cathode band White Package Code LLD
Outline
Cathode band 1 2
Cathode band 1 2
1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note Symbol VRM VR I FM I FSM IO Tj Tstg
- 1
Value 70 60 450 4 150 175 -65 to +175
Unit V V m A A m A °C °C
1. Within 1µs forward surge current..
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Reverse voltage Reverse current Capacitance Reverse recovery time Symbol VF VR IR C t rr Min
- 70
- -
- Typ
- -
- -
- Max 0.8
- 0.1 3.0 3.0 Unit V V µA p F ns Test Condition I F = 10 m A I R = 5µA VR = 60V VR = 0V, f = 1 MHz I F = 10 m A, VR = 6V, RL = 50Ω, I rr = 0.1IR
Main Characteristic
-1
-4
Ta=125°C 10 (A) 10
-2 -5
Reverse current I R (A)
Forward current I F
-6
Ta=75°C
Ta= 125 °C Ta=7 5°C Ta=2 5°C Ta=-2...
