Datasheet4U.com

K1162 - Silicon N-Channel MOS FET

Product Overview

Hitachi Semiconductor

📥 Download Datasheet

K1162 Silicon N-Channel MOS FET by Hitachi Semiconductor - Datasheet Preview — Datasheet preview – K1162

Datasheet Details

Part number	K1162
Manufacturer	Hitachi Semiconductor
File Size	33.54 KB
Description	Silicon N-Channel MOS FET
Datasheet	K1162 Datasheet
Additional preview pages of the K1162 datasheet.

Product details

Features

Low on-resistance.
High speed switching.
Low drive current.
No secondary breakdown.
Suitable for switching regulator and DC-DC converter Outline TO-3P D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1161, 2SK1162 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1161 2SK1162 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storag.

📁 Similar Datasheet

K1160 - 2SK1160 (Renesas)
K1160AA - Dual Output Crystal Clock Oscillators (Champion Technologies)
K1165 - Silicon N Channel MOS FET (Renesas Technology)
K1166 - Silicon N Channel MOS FET (Renesas Technology)
K1169 - 2SK1169 (Renesas Technology)
K1100BA - clock oscillator (MTRONPTI)
K1100F - Crystal Clock Oscillators (Champion)
K1100y - Thyristors (Littelfuse)

Other Datasheets by Hitachi Semiconductor

K1164 - 2SK1164
K1153 - 2SK1153
K1154 - 2SK1154
K1158 - 2SK1158
K1170 - 2SK1170

Published: Dec 6, 2015 |