| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
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Sensata Circuit Breakers | IULK1-1-65F-20.0-01 | CIR BRKR MAG-HYDR | DigiKey | 0 | 3 units |
$62.46
|
🛒 Buy Now |
K1165
Renesas ↗ Technology
70.73 KB
Silicon n channel mos fet.
2SK1165, 2SK1166
Silicon N Channel MOS FET
Application
High speed power switching
Features
* Low on-.
resistance * High speed switching * Low drive current * No secondary breakdown * Suitable for switch.
📁 Related Datasheet
K1160 - 2SK1160
(Renesas)
2SK1159, 2SK1160
Silicon N Channel MOS FET
REJ03G0911-0200 (Previous: ADE-208-1249) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Fea.
K1160AA - Dual Output Crystal Clock Oscillators
(Champion Technologies)
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K1162 - Silicon N-Channel MOS FET
(Hitachi Semiconductor)
2SK1161, 2SK1162
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive curr.
K1164 - 2SK1164
(Hitachi Semiconductor)
2SK1163, 2SK1164
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low driv.
K1166 - Silicon N Channel MOS FET
(Renesas Technology)
2SK1165, 2SK1166
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive curr.
K1169 - 2SK1169
(Renesas Technology)
..
2SK1169, 2SK1170
Silicon N Channel MOS FET
REJ03G0916-0200 (Previous: ADE-208-1254) Rev.2.00 Sep 07, 2005
Application
High speed.
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