K2788 - 2SK2788

Hitachi Semiconductor

Datasheet Details

Low on-resistance R DS(on) = 0.12Ω typ (VGS = 10 V, I D = 1 A).
Low drive current.
High speed switching.
4V gate drive devices. Outline UPAK 3 D 2 1 4 G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2788 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse).
2 1 Ratings 60 ±20 2 4 2 1 150.
55 to +150 Unit V V A A A W °C °C Body to drain diode re.

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Published: Sep 1, 2014 |