BB601M Datasheet - Hitachi

BB601M Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB601M Features

* Build in Biasing Circuit; To reduce using parts cost & PC board space.

* High gain; PG = 21.5 dB typ. at f = 900 MHz

* Low noise; NF = 1.85 dB typ. at f = 900 MHz

* Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

Datasheet Details

BB601M

Hitachi

67.13 KB

Build in biasing circuit mos fet ic uhf rf amplifier.

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