HAT2096H - Silicon N-Channel Power MOSFET

Hitachi

Datasheet Details

Part number	HAT2096H
Manufacturer	Hitachi
File Size	94.11 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HAT2096H_Hitachi.pdf

Capable of 4.5 V gate drive.
Low drive current.
High density mounting.
Low on-resistance RDS(on) = 4.2 mΩ typ. (at VGS = 10 V) Outline LFPAK 5 5 D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5 Drain S S S 1 2 3 HAT2096H Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, dut.

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Published: Aug 19, 2005 |