HM5117400B Datasheet - Hitachi

HM5117400B 4M DRAM

HM5117400B Features

* Single 5 V ( ± 10%)

* High speed  Access time : 60 ns/ 70 ns/ 80 ns (max)

* Low power dissipation  Active mode : 605 mW/550 mW/495 mW(max)  Standby mode : 11 mW (max) : 0.83 mW (max) (L-version)

* Fast page mode capability

* Long refresh period  2048 ref

Datasheet Details

HM5117400B

Hitachi

699.18 KB

4m dram.

📁 Related Datasheet

HM5117400 (HM5116400 / HM5117400) 4M DRAM (Hitachi)

HM5117400AS7GS CMOS 4M DRAM (ETC)

HM5117405 (HM5116405 / HM5117405) 16M EDO DRAM (Hitachi)

HM5117800BJ CMOS 2M x 8-Bit DRAM (ETC)

HM5117805 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh (Elpida Memory)

HM5116100 16M FP DRAM (Hitachi Semiconductor)

HM5116400 (HM5116400 / HM5117400) 4M DRAM (Hitachi)

HM5116405 (HM5116405 / HM5117405) 16M EDO DRAM (Hitachi)

TAGS

HM5117400B HM5117400B DRAM Hitachi

HM5117400B Distributor