* Single 5 V ( ± 10%)
* High speed Access time : 60 ns/ 70 ns/ 80 ns (max)
* Low power dissipation Active mode : 605 mW/550 mW/495 mW(max) Standby mode : 11 mW (max) : 0.83 mW (max) (L-version)
* Fast page mode capability
* Long refresh period 2048 ref
HM5117400B Datasheet (699.18 KB)
HM5117400B
Hitachi
699.18 KB
4m dram.
www.DataSheet4U.com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com HM5117400B Series 4,194.
📁 Related Datasheet
HM5117400 (HM5116400 / HM5117400) 4M DRAM (Hitachi)
HM5117400AS7GS CMOS 4M DRAM (ETC)
HM5117405 (HM5116405 / HM5117405) 16M EDO DRAM (Hitachi)
HM5117800BJ CMOS 2M x 8-Bit DRAM (ETC)
HM5117805 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh (Elpida Memory)
HM5116100 16M FP DRAM (Hitachi Semiconductor)
HM5116400 (HM5116400 / HM5117400) 4M DRAM (Hitachi)
HM5116405 (HM5116405 / HM5117405) 16M EDO DRAM (Hitachi)
HM5118160 16M FP DRAM (Hitachi)
HM5118160B 1M x 16-Bit DRAM (Hitachi)
