MBM200JS12EW
IGBT MODU ODULE
Silicon N-channel IGBT OUTLINE DRAWING
4-Fast-on Terminal #110
Unit in mm
FEAT RES EATURES
- High speed and low saturation voltage.
- low noise due to built-in free-wheeling diode
- ultra soft fast recovery diode(USFD).
- Isolated head sink (terminal to base).
4- φ 6.5
108 93 20
3-M6
C2E1
G2 E2
E1
E2
C1
G1
7 12
PDE-M200JS12EW-0
47 φ 0.8
30 6.5
C2E1
G2 E2 E2 C1 E1 G1
ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item
Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current
Weight: 470 (g)
TERMINALS
Symbol
VCES VGES IC ICp IF IFM Pc Tj Tstg VISO
- Unit
V V A A W °C °C VRMS N.m (kgf.cm)
1,200 ±20 200 400 200 (1) 400 1,470 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 2.94(30) (2) 2.94(30) (3)
DC 1ms DC 1ms
Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting
Notes:(1)RMS Current of Diode 60Arms max. (2)(3)Remended Value 2.45N.m(25kgf.cm...
