MBM200JS12EW Datasheet - Hitachi

MBM200JS12EW IGBT POWER MODULE

IGBT MODU ODULE MBM200JS12EW Silicon N-channel IGBT OUTLINE DRAWING 4-Fast-on Terminal #110 Unit in mm FEAT RES EATURES High speed and low saturation voltage. low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). Isolated head sink (terminal to base). 4- φ 6.5 20 108 93 20 20 3-M6 C2E1 G2 E2 E1 E2 C1 G1 28 28 7 12 PDE-M200JS12EW-0 47 φ 0.8 30 6.5 C2E1 G2 E2 E2 C1 E1 G1 ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item Collector Emitter V.

MBM200JS12EW_Hitachi.pdf