HFD3
Hongfa
203.97 KB
Subminiature signal relay.
753.
@B1;8<80AB?4 @86<0: ?4:0F
Hdg` Pj5AG8::;?8 3C4
Hdg` Pj5A;778??=>
Hdg` Pj5AESE8;7797>;7@
5KGWXUKV
_ Upmb` rdocnoi_ qjgob` pk oj 9<77XCE3 h``on .
📁 Related Datasheet
HFD1N60 - N-Channel MOSFET
(SemiHow)
HFD1N60_HFU1N60
Dec 2005
HFD1N60 / HFU1N60
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 0.9 A
FEATURES
Originative New Design .
HFD1N60F - 600V N-Channel MOSFET
(SemiHow)
HFD1N60F_HFU1N60F
Sep 2015
HFD1N60F / HFU1N60F
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 1 A
FEATURES
Originative New Design .
HFD1N60S - N-Channel MOSFET
(SemiHow)
HFD1N60S / HFU1N60S
Sep 2009
HFD1N60S / HFU1N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ = 10 Ω ID = 1.0 A
FEATURES
Originative New Desi.
HFD1N65 - N-Channel MOSFET
(SemiHow)
HFD1N65 / HFU1N65
April 2006
HFD1N65 / HFU1N65
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ = 10.5 Ω ID = 0.8 A
FEATURES
Originative New Desi.
HFD1N65S - N-Channel MOSFET
(SemiHow)
HFD1N65S / HFU1N65S
HFD1N65S / HFU1N65S
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate .
HFD1N70 - N-Channel MOSFET
(SemiHow)
HFD1N70 / HFU1N70
Dec 2008
HFD1N70 / HFU1N70
700V N-Channel MOSFET
BVDSS = 700 V RDS(on) typ = 14.0 Ω ID = 0.8 A
FEATURES
Originative New Design.
HFD1N80 - N-Channel MOSFET
(SemiHow)
HFD1N80 / HFU1N80
April 2006
HFD1N80 / HFU1N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ = 13 Ω ID = 1.0 A
FEATURES
Originative New Design.
HFD2 - SUBMINIATURE DIP RELAY
(ETC)
HFD2
SUBMINIATURE DIP RELAY
Features
•2
Form C contact,Polarized relay sensitivity 150mW
• High • Fits
standard 16 pin IC socket switching capacit.
