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3DD6012A6 Datasheet - Huajing Microelectronics

3DD6012A6 Silicon NPN bipolar transistor low-frequency amplification

NPN ○R 3DD6012A6 1 ： 3DD6012A6 NPN ，， ，、 VCEO 。 ：TO-126， RoHS 。 IC Ptot（TC=25℃） 2 ： TO-126 530 1.2 50 1 2 3 1. B 2. C 3. E 3 ： 、， 。 B C V A W E () （Pb） （Hg） （Cd） （Cr(VI)） (PBB) （PBDE） ≤0.1% ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1% ○○○○○ ○ ○○○○○ ○ ○○○○○ ○ ○○○○○ ○ ×○○○○ ○ ○： SJ/T11363-2006 。 ×： SJ/T11363-2006 。 （Pb）， RoHS 。 1 5 2008 4 ，Ta= 25℃ - - - Ta=25℃ Tc=25℃ VCBO VCEO VEBO IC Pt.

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Datasheet Details

Part number:

3DD6012A6

Manufacturer:

Huajing Microelectronics

File Size:

193.88 KB

Description:

Silicon npn bipolar transistor low-frequency amplification.

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