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3DD6012A6 Datasheet - Huajing Microelectronics

3DD6012A6 - Silicon NPN bipolar transistor low-frequency amplification

NPN ○R 3DD6012A6 1 : 3DD6012A6 NPN ,, ,、 VCEO 。 :TO-126, RoHS 。 IC Ptot(TC=25℃) 2 : TO-126 530 1.2 50 1 2 3 1.

B 2.

C 3.

E 3 : 、, 。 B C V A W E () (Pb) (Hg) (Cd) (Cr(VI)) (PBB) (PBDE) ≤0.1% ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1% ○○○○○ ○ ○○○○○ ○ ○○○○○ ○ ○○○○○ ○ ×○○○○ ○ ○: SJ/T11363-2006 。 ×: SJ/T11363-2006 。 (Pb), RoHS 。 1 5 2008 4 ,Ta= 25℃ - - - Ta=25℃ Tc=25℃ VCBO VCEO VEBO IC Pt

3DD6012A6-HuajingMicroelectronics.pdf

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Datasheet Details

Part number:

3DD6012A6

Manufacturer:

Huajing Microelectronics

File Size:

193.88 KB

Description:

Silicon npn bipolar transistor low-frequency amplification.

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