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8PA60N06AA-G

Silicon N-Channel Power MOSFET

8PA60N06AA-G Features

* l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 d

8PA60N06AA-G General Description

8PA60N06 AA-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization.

8PA60N06AA-G Datasheet (1.82 MB)

Preview of 8PA60N06AA-G PDF

Datasheet Details

Part number:

8PA60N06AA-G

Manufacturer:

Huajing Microelectronics

File Size:

1.82 MB

Description:

Silicon n-channel power mosfet.

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8PA60N06AA-G Silicon N-Channel Power MOSFET Huajing Microelectronics

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