BT25T120ANF - Silicon FS Planar IGBT

Huajing Microelectronics

BT25T120ANF Datasheet Preview — Preview of BT25T120ANF PDF

Datasheet Details

Part number	BT25T120ANF
Manufacturer	Huajing Microelectronics
File Size	172.53 KB
Description	Silicon FS Planar IGBT
Datasheet	BT25T120ANF-HuajingMicroelectronics.pdf

BT25T120ANF Product details

Description

Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 1200V Trench FS-IGBT offers superior conduction and switching performances, high avalanche ruggedness.

Features

l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 1.9V @ IC = 25A and TC = 25°C l Extremely enhanced avalanche capability.

📁 BT25T120ANF Similar Datasheet

BT252 - 20 MSPS Monolithic CMOS Single-Channel 8 Bit Image Digitizer (Brooktree)
Bt254 - 30 MSPS Monolithic CMOS Triple-Channel 8-bit Image Digitizer (Brooktree)
BT258 - Thyristors logic level (NXP)
BT258-500R - Thyristors logic level (NXP)
BT258-600R - Thyristors logic level (NXP)
BT258-800R - Thyristors logic level (NXP)
BT258B - Thyristors logic level (NXP)
BT258B-500R - Thyristors logic level (NXP)

Other Datasheets by Huajing Microelectronics

BT25T120CKR - Silicon FS Trench IGBT

Published: Dec 6, 2016 |