BT25T120CKR Silicon FS Trench IGBT

Huajing Microelectronics

Description

Silicon FS Trench IGBT BT25T120 CKR ○R General .
Using HUAJING's proprietary trench design, advanced FS(field stop) technology and integrated with Free Wheeling Diode, the 1200V Trench FS IGBT offer.

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Datasheet Specifications

Part number: BT25T120CKR
Manufacturer: Huajing Microelectronics
File Size: 250.20 KB
Datasheet: BT25T120CKR-HuajingMicroelectronics.pdf
Description: Silicon FS Trench IGBT

Applications

* Power switch circuit of induction cooker(IH). Absolute Maximum Ratings （Tc= 25℃ unless otherwise specified）： Symbol Parameter VCES Collector-Emitter Voltage VGES Gate- Emitter Voltage IC ICMa1 IF IFM PD Collector Current Collector Current @TC = 100 °C Pulsed Collector Current Diode Conti

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📁 Related Datasheet

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BT25T120CKR Silicon Trench IGBT Huajing Microelectronics

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