CS630A4H Datasheet, mosfet equivalent, Huajing Microelectronics

CS630A4H Features

  • Mosfet l Fast Switching l Low ON Resistance(Rdson≤0.28Ω) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test Appl

PDF File Details

Part number:

CS630A4H

Manufacturer:

Huajing Microelectronics

File Size:

836.90kb

Download:

📄 Datasheet

Description:

Silicon n-channel power mosfet. CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction l

Datasheet Preview: CS630A4H 📥 Download PDF (836.90kb)
Page 2 of CS630A4H Page 3 of CS630A4H

CS630A4H Application

  • Applications Automotive、DC Motor Control and Class D Amplifier. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter Rating VDSS ID ID

TAGS

CS630A4H
Silicon
N-Channel
Power
MOSFET
Huajing Microelectronics

📁 Related Datasheet

CS630A4R - Silicon N-Channel Power MOSFET (CR Micro)
Silicon N-Channel Power MOSFET ○R CS630 A4R General Description: CS630 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-ali.

CS630A3H - Silicon N-Channel Power MOSFET (Huajing Microelectronics)
Silicon N-Channel Power MOSFET CS630 A3H ○R General Description: CS630 A3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne.

CS630A3R - Silicon N-Channel Power MOSFET (CR Micro)
Silicon N-Channel Power MOSFET ○R CS630 A3R General Description: CS630 A3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-ali.

CS630A8H - Silicon N-Channel Power MOSFET (Huajing Microelectronics)
Silicon N-Channel Power MOSFET CS630 A8H ○R General Description: CS630 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne.

CS630 - Phase Control Thyristor (IXYS Corporation)
Phase Control Thyristor V CS 630 ITRMS = 1400 A ITAVM = 630 A VRRM = 1200 - 1600 VRSM VDSM V 1200 1400 1600 V RRM V DRM V Type 1 2 2 4 3 3 4 12.

CS630D - N-CHANNEL MOSFET (BLUE ROCKET ELECTRONICS)
.

CS630F - VDMOS transistor (ETC)
CS630F CS630F VDMOS 1. CS630F VDMOS ,、。: ● ● ● 10.4max ● ● :TO-220F 15.5max 4.8max 2.7max 2. 2.1 ,Tamb= 25℃ () Ta=25℃ Tc=25℃ .

CS630FA9H - Silicon N-Channel Power MOSFET (Huajing Microelectronics)
Silicon N-Channel Power MOSFET CS630F A9H ○R General Description: CS630F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig.

CS630FA9R - Silicon N-Channel Power MOSFET (CR Micro)
Silicon N-Channel Power MOSFET ○R CS630F A9R General Description: CS630F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a.

CS634F - N-Channel MOSFET (LZG)
IRFS634(CS634F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts