CS630A4H Datasheet (Huajing Microelectronics) - Silicon N-Channel Power MOSFET

CS630A4H, Silicon N-Channel Power MOSFET

CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 200 9 83 0.23 the avalanche energy.

The transistor can be used in various power switch

CS630A4H Features

* l Fast Switching l Low ON Resistance(Rdson≤0.28Ω) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol