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CS630A4H Datasheet Silicon N-Channel Power MOSFET

Manufacturer: Huajing Microelectronics

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Datasheet Details

Part number CS630A4H
Manufacturer Huajing Microelectronics
File Size 836.90 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS630A4H Datasheet

General Description

： CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 200 9 83 0.23 the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

The package form is TO-252, which accords with the RoHS standard.

Overview

Silicon N-Channel Power MOSFET CS630 A4H ○R General.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤0.28Ω) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test.

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