CS630A4H Silicon N-Channel Power MOSFET

Huajing Microelectronics

Description

Silicon N-Channel Power MOSFET CS630 A4H ○R General .
CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve swit.

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Datasheet Specifications

Part number: CS630A4H
Manufacturer: Huajing Microelectronics
File Size: 836.90 KB
Datasheet: CS630A4H-HuajingMicroelectronics.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C

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CS630A4H Silicon N-Channel Power MOSFET Huajing Microelectronics

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