CS740FA9H Datasheet - Huajing Microelectronics

CS740FA9H Silicon N-Channel Power MOSFET

CS740F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 400 10 45 0.36 performance and enhance the avalanche energy. The transistor can be used in various power swi.

CS740FA9H Features

* l Fast Switching l Low ON Resistance(Rdson≤0.50Ω) l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:21pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Param

CS740FA9H-HuajingMicroelectronics.pdf