Click to expand full text
Silicon N-Channel Power MOSFET
CS740F A9H
○R
General Description：
CS740F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD (TC=25℃) RDS(ON)Typ
400 10 45 0.36
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-220F,
which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤0.50Ω) l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:21pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS740FA9H Datasheet
