H5TQ4G63AFR-xxC Datasheet - Hynix Semiconductor

H5TQ4G63AFR-xxC 4Gb DDR3 SDRAM

The H5TQ4G43AFR-xxC, H5TQ4G83AFR-xxC and H5TQ4G63AFR-xxC are a 4Gb CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising a.

H5TQ4G63AFR-xxC Features

* and Ordering Information FEATURES

* VDD=VDDQ=1.5V +/- 0.075V

* Fully differential clock inputs (CK, CK) operation

* 8banks

* Average Refresh Cycle (Tcase of 0 oC~ 95 oC)

* Differential Data Strobe (DQS, DQS) - 7.8 µs at 0oC ~ 85 oC - 3.9 µs at 85oC ~ 95 oC

H5TQ4G63AFR-xxC Datasheet (780.09 KB)