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HY27SF081G2M, HY27UF081G2M Datasheet - Hynix Semiconductor

HY27SF081G2M - (HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory

The HYNIX HY27(U/S)F(08/16)1G2M series is a 128Mx8bit with spare 4Mx8 bit capacity.

The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

The memory is divided into blocks that can

( DataSheet : www.DataSheet4U.com ) Preliminary HY27UF(08/16)1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No.

0.0 1) Initial Draft.

1) Correct Fig.10 Sequential out cycle after read 2) Add the text to Fig.1, Table.1, Table.2 - text : IO15 - IO8 (x16 only) 3) Delete ‘3.2 Page program NOTE 1.

- Note : if possible it is better to remove this constrain 4) Change the text ( page

HY27SF081G2M Features

* SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - Manufact

HY27UF081G2M_HynixSemiconductor.pdf

This datasheet PDF includes multiple part numbers: HY27SF081G2M, HY27UF081G2M. Please refer to the document for exact specifications by model.
HY27SF081G2M Datasheet Preview Page 2 HY27SF081G2M Datasheet Preview Page 3

Datasheet Details

Part number:

HY27SF081G2M, HY27UF081G2M

Manufacturer:

Hynix Semiconductor

File Size:

420.81 KB

Description:

(hy27uf(08/16)1g2m / hy27sf(08/16)1g2m) 1gbit (128mx8bit/64mx16bit) nand flash memory.

Note:

This datasheet PDF includes multiple part numbers: HY27SF081G2M, HY27UF081G2M.
Please refer to the document for exact specifications by model.

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