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HY27SF161G2M, HY27UF081G2M Datasheet - Hynix Semiconductor

HY27SF161G2M, HY27UF081G2M, (HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory

( DataSheet : www.DataSheet4U.com ) Preliminary HY27UF(08/16)1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document .
The HYNIX HY27(U/S)F(08/16)1G2M series is a 128Mx8bit with spare 4Mx8 bit capacity.
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HY27UF081G2M_HynixSemiconductor.pdf

This datasheet PDF includes multiple part numbers: HY27SF161G2M, HY27UF081G2M. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

HY27SF161G2M, HY27UF081G2M

Manufacturer:

Hynix Semiconductor

File Size:

420.81 KB

Description:

(HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory

Note:

This datasheet PDF includes multiple part numbers: HY27SF161G2M, HY27UF081G2M.
Please refer to the document for exact specifications by model.

Applications

* NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ. ) STATUS REGISTER ELECTRONIC SIGNATURE - Manufacturer Code - Device Code SUPPLY VOLTAGE - 3.3V device: VCC = 2.7 to 3.6V : HY27UFXX1G2M CHIP ENABLE

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