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HY27SSxxx Datasheet, Flash, Hynix Semiconductor

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HY27SSxxx

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Hynix Semiconductor

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Description:

(hy27usxxx) 512mbit (64mx8bit / 32mx16bit) nand flash. of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (Page22) 3) Add the description of

✔ HY27SSxxx Features

SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or

✔ HY27SSxxx Application

FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address

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TAGS

HY27SSxxx HY27USxxx 512Mbit 64Mx8bit 32Mx16bit NAND Flash Hynix Semiconductor