HY27SSxxx (HY27USxxx) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash

Hynix Semiconductor

Description

HY27SS(08/16)121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash M.
of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (Page22) 3) Add the description of System Interface.

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Datasheet Specifications

Part number: HY27SSxxx
Manufacturer: Hynix Semiconductor
File Size: 729.94 KB
Datasheet: HY27SSxxx_HynixSemiconductor.pdf
Description: (HY27USxxx) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash

Applications

* FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities STATUS REGISTER ELECTRONIC SIGNATURE SUPPLY VOLTAGE Sequential Row Read OPTION : HY27USXX121M - 3.3V device: VCC = 2.7 to 3.6V - 1.8V devic

HY27SSxxx Distributors

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HY27SSxxx HY27USxxx 512Mbit 64Mx8bit 32Mx16bit NAND Flash Hynix Semiconductor

Hynix Semiconductor HY27SSxxx-like datasheet