512Mbit Datasheet | Specifications & PDF Download

K4J52324QE 512M GDDR3 SDRAM 512Mbit GDDR3 SDRAM Revision 1.3 Feb 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND

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HY5RS123235BFP 512Mbit (16Mx32) GDDR3 SDRAM HY5RS123235BFP This document is a general product description and is subject to change without notice. Hy

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K4N51163QZ 512M gDDR2 SDRAM 512Mbit gDDR2 SDRAM 84FBGA with Halogen-Free & Lead-Free (RoHS compliant) Revision 1.3 September 2008 INFORMATION IN TH

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K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to c

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www.DataSheet4U.com K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM 512Mbit XDR TM DRAM(C-die) Revision 1.1 August 2006 INFORMATION IN T

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Mobile DiskOnChip G3 512Mbit/1Gbit Flash Disk with MLC NAND and M-Systems’ x2 Technology Preliminary Data Sheet, June 2003 www.DataSheet4U.com Highl

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S25FL512S 512 Mbit (64 Mbyte) MirrorBit® Flash Non-Volatile Memory CMOS 3.0 Volt Core with Versatile I/O Serial Peripheral Interface with Multi-I/O Da

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512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M (16Mx32bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19

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512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M (16Mx32bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19

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www.DataSheet4U.com K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM 512Mbit XDR TM DRAM(C-die) Revision 1.1 August 2006 INFORMATION IN T

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512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M (16Mx32bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19

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www.DataSheet4U.com K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM 512Mbit XDR TM DRAM(C-die) Revision 1.1 August 2006 INFORMATION IN T

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HY27SS(08/16)121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash M

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512Mbit (64Mx8Bit)NAND FLASH 512Mb NAND FLASH AFND1208U1 Rev.10 Nov. 2013 Confidential 1 512Mbit (64Mx8Bit)NAND FLASH Revision No. History Rev.

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512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M (16Mx32bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19

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ESMT Flash FEATURES  Voltage Supply: 2.7V ~ 3.6V  Organization - Memory Cell Array: (64M + 2M) x 8bit - Data Register: (2K + 64) x 8bit  Automatic

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HY27US(08/16)121A Series HY27SS(08/16)121A Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash M

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K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to c

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K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to c

(6 views)

www.DataSheet4U.com K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM 512Mbit XDR TM DRAM(C-die) Revision 1.1 August 2006 INFORMATION IN T

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