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K4S511632M

512Mbit SDRAM

K4S511632M Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

K4S511632M General Description

The K4S511632M is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock .

K4S511632M Datasheet (111.71 KB)

Preview of K4S511632M PDF

Datasheet Details

Part number:

K4S511632M

Manufacturer:

Samsung semiconductor

File Size:

111.71 KB

Description:

512mbit sdram.
K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to c.

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K4S511632M 512Mbit SDRAM Samsung semiconductor

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