K4S511632M Datasheet, sdram equivalent, Samsung semiconductor

K4S511632M Features

  • Sdram
  • JEDEC standard 3.3V power supply
  • LVTTL compatible with multiplexed address
  • Four banks operation
  • MRS cycle with address key programs -. CAS latenc

PDF File Details

Part number:

K4S511632M

Manufacturer:

Samsung semiconductor

File Size:

111.71kb

Download:

📄 Datasheet

Description:

512mbit sdram. The K4S511632M is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16bits, fabricated with

Datasheet Preview: K4S511632M 📥 Download PDF (111.71kb)
Page 2 of K4S511632M Page 3 of K4S511632M

K4S511632M Application

  • Applications ORDERING INFORMATION Max Freq. 133MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL Interface Package 54pin TSOP(II) FUNCTIONAL BLOCK DIAGRA

TAGS

K4S511632M
512Mbit
SDRAM
Samsung semiconductor

📁 Related Datasheet

K4S511632B-TC75 - 512Mb B-die SDRAM Specification (Samsung semiconductor)
SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to .

K4S511632B-TCL75 - 512Mb B-die SDRAM Specification (Samsung semiconductor)
SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to .

K4S511632D - 512Mb D-die SDRAM (Samsung)
K4S510432D K4S510832D K4S511632D Synchronous DRAM 512Mb D-die SDRAM Specification 54 TSOP-II with Lead-Free (RoHS pliant) INFORMATION IN THIS DO.

K4S511632M-TC - 512Mbit SDRAM (Samsung semiconductor)
K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to c.

K4S511632M-TL1H - 512Mbit SDRAM (Samsung semiconductor)
K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to c.

K4S511632M-TL1L - 512Mbit SDRAM (Samsung semiconductor)
K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to c.

K4S511632M-TL75 - 512Mbit SDRAM (Samsung semiconductor)
K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to c.

K4S51163PF-F1L - 8M x 16Bit x 4 Banks Mobile-SDRAM (Samsung semiconductor)
K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS patible with multiplexed address. Four banks operation. MRS c.

K4S51163PF-F90 - 8M x 16Bit x 4 Banks Mobile-SDRAM (Samsung semiconductor)
K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS patible with multiplexed address. Four banks operation. MRS c.

K4S51163PF-Y - 8M x 16Bit x 4 Banks Mobile-SDRAM (Samsung semiconductor)
K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS patible with multiplexed address. Four banks operation. MRS c.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts