* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8) -. Burst type (Sequential & Interleave)
* All inputs are sampled at
K4S511632B-TC75 Datasheet (149.53 KB)
K4S511632B-TC75
Samsung semiconductor
149.53 KB
512mb b-die sdram specification.
SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 Samsung Electronics reserves the right.
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