K4S511632B-TC75 Datasheet - Samsung semiconductor

K4S511632B-TC75, 512Mb B-die SDRAM Specification

SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right.
The K4S510432B / K4S510832B / K4S511632B is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits / 4 x.

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Datasheet Details

Part number:

K4S511632B-TC75

Manufacturer:

Samsung semiconductor

File Size:

149.53 KB

Description:

512Mb B-die SDRAM Specification

Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8) -. Burst type (Sequential & Interleave)
* All inputs are sampled at

Applications

* Ordering Information Part No. K4S510432B-TC(L)75 K4S510832B-TC(L)75 K4S511632B-TC(L)75 Orgainization 128Mb x 4 (CL=3) 64Mb x 8 (CL=3) 32Mb x 16 (CL=3) Max Freq. 133MHz 133MHz 133MHz LVTTL 54pin TSOP(II) Interface Package Organization 128Mx4 64Mx8 32Mx16 Row Address A0~A12 A0~A12 A0~A12 Column A

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K4S511632B-TC75 512Mb B-die SDRAM Specification Samsung semiconductor

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