Datasheet4U Logo Datasheet4U.com

K4S511632B-TC75

512Mb B-die SDRAM Specification

K4S511632B-TC75 Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8) -. Burst type (Sequential & Interleave)

* All inputs are sampled at

K4S511632B-TC75 General Description

The K4S510432B / K4S510832B / K4S511632B is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits / 4 x 16,777,216 words by 8 bits / 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows pre.

K4S511632B-TC75 Datasheet (149.53 KB)

Preview of K4S511632B-TC75 PDF

Datasheet Details

Part number:

K4S511632B-TC75

Manufacturer:

Samsung semiconductor

File Size:

149.53 KB

Description:

512mb b-die sdram specification.
SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004
* Samsung Electronics reserves the right.

📁 Related Datasheet

K4S511632B-TCL75 - 512Mb B-die SDRAM Specification (Samsung semiconductor)
SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to .

K4S511632D - 512Mb D-die SDRAM (Samsung)
K4S510432D K4S510832D K4S511632D Synchronous DRAM 512Mb D-die SDRAM Specification 54 TSOP-II with Lead-Free (RoHS pliant) INFORMATION IN THIS DO.

K4S511632M - 512Mbit SDRAM (Samsung semiconductor)
K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to c.

K4S511632M-TC - 512Mbit SDRAM (Samsung semiconductor)
K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to c.

K4S511632M-TL1H - 512Mbit SDRAM (Samsung semiconductor)
K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to c.

K4S511632M-TL1L - 512Mbit SDRAM (Samsung semiconductor)
K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to c.

K4S511632M-TL75 - 512Mbit SDRAM (Samsung semiconductor)
K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to c.

K4S51163PF-F1L - 8M x 16Bit x 4 Banks Mobile-SDRAM (Samsung semiconductor)
K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS patible with multiplexed address. Four banks operation. MRS c.

TAGS

K4S511632B-TC75 512Mb B-die SDRAM Specification Samsung semiconductor

Image Gallery

K4S511632B-TC75 Datasheet Preview Page 2 K4S511632B-TC75 Datasheet Preview Page 3

K4S511632B-TC75 Distributor