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K4S511632B-TCL75

512Mb B-die SDRAM Specification

K4S511632B-TCL75 Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8) -. Burst type (Sequential & Interleave)

* All inputs are sampled at

K4S511632B-TCL75 General Description

The K4S510432B / K4S510832B / K4S511632B is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits / 4 x 16,777,216 words by 8 bits / 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows pre.

K4S511632B-TCL75 Datasheet (149.53 KB)

Preview of K4S511632B-TCL75 PDF

Datasheet Details

Part number:

K4S511632B-TCL75

Manufacturer:

Samsung semiconductor

File Size:

149.53 KB

Description:

512mb b-die sdram specification.
SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004
* Samsung Electronics reserves the right.

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K4S511632B-TCL75 512Mb B-die SDRAM Specification Samsung semiconductor

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