K4S511632B-TCL75 Datasheet - Samsung semiconductor

K4S511632B-TCL75 - 512Mb B-die SDRAM Specification

The K4S510432B / K4S510832B / K4S511632B is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits / 4 x 16,777,216 words by 8 bits / 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology.

Synchronous design allows pre

SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 Samsung Electronics reserves the right to change products or specification without notice.

Rev.

1.1 February 2004 SDRAM 512Mb B-die (x4, x8, x16) Revision History Revision 1.0 (January, 2004) - First release.

Revision 1.1 (February, 2004) - Corrected typo.

CMOS SDRAM Rev.

1.1 February 2004 SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM 32M x 4Bit x 4 Banks / 16M x 8Bit x 4 Banks / 8

K4S511632B-TCL75 Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8) -. Burst type (Sequential & Interleave)

* All inputs are sampled at

K4S511632B-TCL75_Samsungsemiconductor.pdf