K4S511632B-TCL75
Samsung semiconductor
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512mb b-die sdram specification. The K4S510432B / K4S510832B / K4S511632B is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words
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K4S511632B-TC75 - 512Mb B-die SDRAM Specification
(Samsung semiconductor)
SDRAM 512Mb B-die (x4, x8, x16)
CMOS SDRAM
512Mb B-die SDRAM Specification
Revision 1.1 February 2004
* Samsung Electronics reserves the right to .
K4S511632D - 512Mb D-die SDRAM
(Samsung)
K4S510432D K4S510832D K4S511632D
Synchronous DRAM
512Mb D-die SDRAM Specification
54 TSOP-II with Lead-Free
(RoHS pliant)
INFORMATION IN THIS DO.
K4S511632M - 512Mbit SDRAM
(Samsung semiconductor)
K4S511632M
CMOS SDRAM
512Mbit SDRAM
8M x 16bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.3 May. 2002
Samsung Electronics reserves the right to c.
K4S511632M-TC - 512Mbit SDRAM
(Samsung semiconductor)
K4S511632M
CMOS SDRAM
512Mbit SDRAM
8M x 16bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.3 May. 2002
Samsung Electronics reserves the right to c.
K4S511632M-TL1H - 512Mbit SDRAM
(Samsung semiconductor)
K4S511632M
CMOS SDRAM
512Mbit SDRAM
8M x 16bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.3 May. 2002
Samsung Electronics reserves the right to c.
K4S511632M-TL1L - 512Mbit SDRAM
(Samsung semiconductor)
K4S511632M
CMOS SDRAM
512Mbit SDRAM
8M x 16bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.3 May. 2002
Samsung Electronics reserves the right to c.
K4S511632M-TL75 - 512Mbit SDRAM
(Samsung semiconductor)
K4S511632M
CMOS SDRAM
512Mbit SDRAM
8M x 16bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.3 May. 2002
Samsung Electronics reserves the right to c.
K4S51163PF-F1L - 8M x 16Bit x 4 Banks Mobile-SDRAM
(Samsung semiconductor)
K4S51163PF-Y(P)F
8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES
1.8V power supply. LVCMOS patible with multiplexed address. Four banks operation. MRS c.
K4S51163PF-F90 - 8M x 16Bit x 4 Banks Mobile-SDRAM
(Samsung semiconductor)
K4S51163PF-Y(P)F
8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES
1.8V power supply. LVCMOS patible with multiplexed address. Four banks operation. MRS c.
K4S51163PF-Y - 8M x 16Bit x 4 Banks Mobile-SDRAM
(Samsung semiconductor)
K4S51163PF-Y(P)F
8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES
1.8V power supply. LVCMOS patible with multiplexed address. Four banks operation. MRS c.