K4S511632B-TC75 - 512Mb B-die SDRAM Specification
(Samsung semiconductor)
SDRAM 512Mb B-die (x4, x8, x16)
CMOS SDRAM
512Mb B-die SDRAM Specification
Revision 1.1 February 2004
* Samsung Electronics reserves the right to .
K4S511632B-TCL75 - 512Mb B-die SDRAM Specification
(Samsung semiconductor)
SDRAM 512Mb B-die (x4, x8, x16)
CMOS SDRAM
512Mb B-die SDRAM Specification
Revision 1.1 February 2004
* Samsung Electronics reserves the right to .
K4S511632M - 512Mbit SDRAM
(Samsung semiconductor)
K4S511632M
CMOS SDRAM
512Mbit SDRAM
8M x 16bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.3 May. 2002
Samsung Electronics reserves the right to c.
K4S511632M-TC - 512Mbit SDRAM
(Samsung semiconductor)
K4S511632M
CMOS SDRAM
512Mbit SDRAM
8M x 16bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.3 May. 2002
Samsung Electronics reserves the right to c.
K4S511632M-TL1H - 512Mbit SDRAM
(Samsung semiconductor)
K4S511632M
CMOS SDRAM
512Mbit SDRAM
8M x 16bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.3 May. 2002
Samsung Electronics reserves the right to c.
K4S511632M-TL1L - 512Mbit SDRAM
(Samsung semiconductor)
K4S511632M
CMOS SDRAM
512Mbit SDRAM
8M x 16bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.3 May. 2002
Samsung Electronics reserves the right to c.