K4S511632M-TC - 512Mbit SDRAM

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S511632M-TC
Manufacturer	Samsung semiconductor
File Size	111.71 KB
Description	512Mbit SDRAM
Datasheet	K4S511632M-TC Datasheet
Additional preview pages of the K4S511632M-TC datasheet.

Product details

Description

The K4S511632M is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG's high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM for masking.
Auto & self refresh.
64ms refresh period (8K cycle.

📁 Similar Datasheet

K4S511632D - 512Mb D-die SDRAM (Samsung)
K4S510432D - 512Mb D-die SDRAM (Samsung)
K4S510832D - 512Mb D-die SDRAM (Samsung)
K4S560432E-UC75 - SDRAM 256Mb E-die (Samsung)
K4S560832E-UC75 - SDRAM 256Mb E-die (Samsung)
K4S561632C - 256Mbit SDRAM (Samsung)
K4S561632E-UC60 - SDRAM 256Mb E-die (Samsung)
K4S561632E-UC75 - SDRAM 256Mb E-die (Samsung)

Other Datasheets by Samsung semiconductor

K4S511632M-TL1H - 512Mbit SDRAM
K4S511632M-TL1L - 512Mbit SDRAM
K4S511632M-TL75 - 512Mbit SDRAM
K4S511632M - 512Mbit SDRAM
K4S511632B-TC75 - 512Mb B-die SDRAM Specification
K4S511632B-TCL75 - 512Mb B-die SDRAM Specification

Published: Apr 7, 2005 |