K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May.
2002 Samsung Electronics reserves the right to change products or specification without notice.
Rev.
0.3 May.
2002 K4S511632M Revision History Revision 0.0 (Mar.
2001) Revision 0.1 (Aug.
2001) Defined target DC characteristics.
CMOS SDRAM Revision 0.2 (Dec.
2001) Changed "Target" to "Preliminary".
Redefined DC characteristics.
Revision 0.3 (May.
2002) Changed "