K4S511632M-TC Datasheet - Samsung semiconductor

K4S511632M-TC 512Mbit SDRAM

The K4S511632M is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock .

K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 May. 2002 K4S511632M Revision History Revision 0.0 (Mar. 2001) Revision 0.1 (Aug. 2001) Defined target DC characteristics. CMOS SDRAM Revision 0.2 (Dec. 2001) Changed "Target" to "Preliminary". Redefined DC characteristics. Revision 0.3 (May. 2002) Changed ".

K4S511632M-TC Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

K4S511632M-TC_Samsungsemiconductor.pdf