K4S511632M-TL1H 512Mbit SDRAM

Samsung semiconductor

Description

K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May.2002 Samsung Electronics reserves the right to c.
The K4S511632M is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG's high p.

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Datasheet Specifications

Part number: K4S511632M-TL1H
Manufacturer: Samsung semiconductor
File Size: 111.71 KB
Datasheet: K4S511632M-TL1H_Samsungsemiconductor.pdf
Description: 512Mbit SDRAM

Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

Applications

* ORDERING INFORMATION Max Freq. 133MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL Interface Package 54pin TSOP(II) FUNCTIONAL BLOCK DIAGRAM I/O Control LWE Data Input Register LDQM Bank Select 8M x 16 8M x 16 8M x 16 8M x 16 Refresh Counter Output Buffer Row Decoder Sense AMP Row Buffer DQi

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K4S511632M-TL1H 512Mbit SDRAM Samsung semiconductor

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